? tmbyv 10-40 small signal schottky diodes description metal to silicon rectifier diodes in glass case featur- ing very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre- quency circuits. august 1998 ed: 1a melf (glass) symbol parameter value unit v rrm repetitive peak reverse voltage 40 v i f (av) average forward current t i = 60 c 1a i fsm surge non repetitive forward current t i = 25 c t p = 10ms 25 sinuso?dal pulse a t i = 25 c t p = 300 m s 50 rectangular pulse t stg t j storage and junction temperature range - 65 to 150 - 65 to 125 c c t l maximum lead temperature for soldering during 15s 260 c absolute maximum ratings (limiting values) symbol parameter value unit r th (j - l) junction-leads 110 c/w * pulse test: t p 300 m s d < 2% . thermal resistance 1/4
2/4 synbol test conditions min. typ. max. unit i r * t j = 25 c v r = v rrm 0.5 ma t j = 100 c 10 v f *i f = 1a t j = 25 c 0.55 v i f = 3a 0.85 * * pulse test: t p 300 m s d < 2% . electrical characteristics static characteristics symbol test conditions min. typ. max. unit c t j = 25 c v r = 0 220 pf dynamic characteristics forward current flow in a schottky rectifier is due to majority carrier conduction. so reverse recovery is not affected by storage charge as in conventional pn junction diodes. nevertheless, when the device switches from for- ward biased condition to reverse blocking state, current is required to charge the depletion capaci- tance of the diode. this current depends only of diode capacitance and external circuit impedance. satisfactory circuit be- haviour analysis may be performed assuming that schottky rectifier consists of an ideal diode in par- allel with a variable capacitance equal to the junc- tion capacitance (see fig. 5 page 4/4). fig. 1 : forward current versus forward voltage at low level (typical values). fig. 2 : forward current versus forward voltage at high level (typical values). TMBYV10-40
fig. 3 : reverse current versus junction temperature. fig. 4 : reverse current versus vrrm in per cent. fig. 5 : capacitance c versus reverse applied voltage v r (typical values) fig. 6 : surge non repetitive forward current for a rectangular pulse with t a 10 ms. 3/4 TMBYV10-40
4/4 fig. 7 : surge non repetitive forward current versus number of cycles. cooling method: by convection and conduction marking: ring at cathode end. weight: 0.139g ordering code : TMBYV10-40 film foot print dimensions (millimeter) package mechanical data melf glass b o / a c c d o / 4 6.5 3 ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.80 5.20 0.189 0.205 ? b 2.50 2.65 0.098 0.104 c 0.45 0.60 0.018 0.024 ? d 2.50 0.098 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1998 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. TMBYV10-40
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